| 摘要 |
<p>A substrate processing arrangement exhibits a thermal cavity with two reflective surfaces and a carbon heater for effectively heating substrates to temperatures of 750°C and more. It has been shown, that even substrates with low absorption properties in the infrared part of the spectrum (glas, silicon, sapphire) can be effectively heated by "sandwiching" a substrate and a heating element between two reflective surfaces, which can be established by a mirror and the target of a PVD source.</p> |
