Layered structure for semiconductor component, has diffusion barrier arranged between protective layer and substrate and indirectly bordered on protective layer, where part of structure is arranged between barrier and component layer

摘要

The structure has an insulation layer provided between a component layer (12) and a guidance rail stack (16). A diffusion barrier (20) is arranged between a protective layer (18) and a substrate (10) and indirectly bordered on the protective layer to impede or prevent diffusion of metal from the protective layer. A part of the structure is arranged between the diffusion barrier and a component layer to permit diffusion of the metal from the protective layer up to a boundary surface of a gate oxide layer while realizing function of the diffusion barrier without damaging the structure. The protective layer consists of a non-metallic carrier material that is selected from a polymer. An independent claim is also included for a semiconductor component.