| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element manufacturing method which can make a semiconductor wafer thinner without causing chip and cracks on an outer periphery of the semiconductor wafer in a grinding process of the semiconductor wafer.SOLUTION: A semiconductor light-emitting element manufacturing method of the present embodiment comprises in the following order: a process of forming a semiconductor wafer by laminating a nitride semiconductor layer on a sapphire substrate; a process of applying an adhesive on the semiconductor wafer on a surface on the nitride semiconductor layer side and subsequently sticking the semiconductor wafer to a fixed plate via the adhesive; and a grinding process of thinning the semiconductor wafer by grinding the sapphire substrate of the semiconductor wafer stuck to the fixed plate. A film thickness of the adhesive applied on the outer periphery of the semiconductor wafer is thicker than a film thickness of the adhesive applied on a central part of the semiconductor wafer. |
