| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method that simultaneously satisfies, in an ultrafine region (for example, a region with a line width or a space width in the order of several tens nanometers), demands for high sensitivity, high resolution in the formation of an isolated line pattern and an isolated space pattern, a good pattern profile and high dray etching durability, and to provide a method for manufacturing an electronic device using the above method, and an electronic device.SOLUTION: The pattern forming method includes, in the following order: a step (1) of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition comprising a resin (Ab) having a specified repeating unit; a step (2) of exposing the film by using an electron beam or extreme ultraviolet rays; and a step (3) of forming a negative pattern by developing the film after exposure by using a developing solution containing an organic solvent. |
