| 发明名称 |
MOS DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
An improved MOS device is provided whereby the p-top layer is defined by a series of discretely placed p type top diffusion regions. The invention also provides methods for fabricating the MOS device of the invention. |
| 申请公布号 |
US2014061721(A1) |
申请公布日期 |
2014.03.06 |
| 申请号 |
US201213596745 |
申请日期 |
2012.08.28 |
| 申请人 |
CHAN CHING-LIN;WU SHYI-YUAN;LIN CHENG-CHI;LIEN SHIH-CHIN;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHAN CHING-LIN;WU SHYI-YUAN;LIN CHENG-CHI;LIEN SHIH-CHIN |
| 分类号 |
H01L29/78;H01L21/331;H01L21/336;H01L29/739 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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