| 摘要 |
<p>A semiconductor element is produced through the following steps of (a) to (c): (a) implanting impurity ions in a semiconductor substrate formed with monocrystalline Si, so as to form at least either an n-type area or a p-type area in the semiconductor substrate; (b) applying a first heat treatment to the semiconductor substrate in which the n-type area or the p-type area is formed, the first heat treatment having a temperature increasing/decreasing rate of 40ºC/sec or more and the highest temperature of 1000 ºC or higher and 1200 ºC or lower; and (c) applying a second heat treatment to the semiconductor substrate, which has been subjected to the first heat treatment, the second heat treatment using a heat treating method having a lower temperature increasing/decreasing rate than that of the first heat treatment.</p> |
