发明名称 TERMINAL STRUCTURE AND SEMICONDUCTOR DEVICE
摘要 The prevent invention relates to a terminal structure including a base material (10), an electrode (20) formed on the material, an insulating sheath layer (30) formed on the electrode and having an opening exposing at least part of the electrode, an under bump metal layer (70) charging the opening and covering part of the insulating sheath layer, and a dome bump (85) covering the under bump metal layer. For a section according to a laminating direction, the under bump metal layer is protruding to the bump. The thickness (Tu0) of the under bump metal layer for the center of the opening is thicker than the thickness (Tu1) of the under bump metal layer for the section of the opening.
申请公布号 KR20140026249(A) 申请公布日期 2014.03.05
申请号 KR20130087804 申请日期 2013.07.25
申请人 TDK CORPORATION 发明人 YOSHIDA KENICHI;ORIKASA MAKOTO;SEIKE HIDEYUKI;HORIKAWA YUHEI;ABE HISAYUKI
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址