发明名称 Method for forming electret containing positive ions
摘要 <p>A method for forming an electret containing positive ions, includes: a first step of contacting water vapor including positive ions to a Si substrate (1) to which heat is being applied, and forming an oxide layer including those ions; a second step of, along with applying an electric field that makes the side of the oxide layer that does not contact the Si substrate (1) be the negative side, and that makes its other side be a positive side, applying heat to the Si substrate (1) in a hydrogen atmosphere, and causing the ions in the oxide layer to shift; and a third step of contacting water vapor including a chemical substance, in an atmosphere of an inactive gas, for forming a hydrophobic chemically adsorbed monomolecular layer, and thus forming a hydrophobic membrane (6) upon the oxide layer; wherein the second step and the third step are performed continuously within one common vessel.</p>
申请公布号 EP2704170(A2) 申请公布日期 2014.03.05
申请号 EP20130182059 申请日期 2013.08.28
申请人 AOI ELECTRONICS CO. LTD. 发明人 SUZUKI, MASATO;HAYASHI, HIROKI
分类号 H01G7/02 主分类号 H01G7/02
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