| 摘要 |
<p>The present invention relates to a semiconductor memory device, a memory system comprising the same, and a method for manufacturing the same wherein the device comprises first insulation film formed at a semiconductor substrate; a pipe channel transistor formed at the upper part of the first insulation film; a vertical channel film protruding from the pipe channel transistor; a vertical memory stack film surrounding the side surface of the vertical channel films; multi-layer interlayer insulation films surrounding the vertical memory stack film and formed along the vertical memory stack film; recesses defined between the interlayer insulation films; and conductive films filling the inside of the recesses wherein the pipe channel transistor comprises a first pipe gate; a trench formed in the first pipe gate; a pipe channel film formed in the trench and connecting the lower parts of the vertical channel films; and a blocking film formed between the first pipe gate and the pipe channel film.</p> |
