Wafer-scale x-ray detector and method of manufacturing the same
摘要
<p>A wafer-scale x-ray detector (100) and a method of manufacturing the same are provided. The wafer-scale x-ray detector includes: a seamless silicon substrate (120) electrically connected to a printed circuit substrate (110); a chip array having a plurality of pixel pads (132) formed on a central region thereof and a plurality of pin pads (134) formed at edges thereof on the seamless silicon substrate; a plurality of pixel electrodes (150) formed to correspond to the pixel pads; vertical wirings (142) and horizontal wirings (144) formed to compensate a difference of regions expanded towards the pixel electrodes from the pixel pads between the chip array and the pixel electrodes; a redistribution layer (140) having an insulating layer to separate the vertical wirings and the horizontal wirings; and a photoconductor layer (160) and a common electrode (170) which cover the pixel electrodes on the redistribution layer.
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申请公布号
EP2463908(A3)
申请公布日期
2014.03.05
申请号
EP20110178442
申请日期
2011.08.23
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
PARK, JAE-CHUL;KIM, CHANG-JUNG;KIM, SANG-WOOK;KIM, SUN-IL