Semiconductor light emitting device with a nitride semiconductor contact layer

摘要

Disclosed is a light emitting device including a light emitting structure (9) including at least a first conductive semiconductor layer (3), an active layer (5), and a second conductive semiconductor layer (7), an electrode layer (13) on the light emitting structure, and a contact layer (11) between the light emitting structure and the electrode layer and including a nitride semiconductor layer.