SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF

摘要

A semiconductor memory device comprises: cell strings containing a plurality of memory cells; page buffers, connected to the cell strings through bit lines, which includes a latch unit that stores data to be programmed to a memory cell or data read from the memory cell; a pre-charge voltage generating circuit for generating a pre-charge voltage from an external voltage according to the data stored in the latch unit; a plurality of bit line pre-charge circuits for transferring the pre-charge voltage to the bit-line in response to pre-charge control signals; and a control circuit which outputs the pre-charge control signals to increase a number of the bit line pre-charge circuits enabled as a number of program pulses increases during a program operation.