| 摘要 |
<p>A semiconductor device comprises: a first memory block including a first active regions extended parallel to a first direction; a second memory block which neighbors with the first memory block, and includes a second active regions extended parallel to the first direction while arranged in a staggered with the first active regions; a first bit lines formed on the upper side of the first active regions; and a second bit lines formed on the upper side of the second active regions. Here, the neighboring memory blocks can be driven simultaneously or separately. When the neighboring memory blocks are driven simultaneously, a resistance of a word line and capacitance between the neighboring bit lines can be reduced.</p> |
