发明名称 Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same
摘要 <p>An air-gap type thin film bulk acoustic resonator (FBAR) and method for fabricating the same. Also disclosed are a filter and a duplexer employing the air-gap type FBAR. The air-gap type FBAR includes: a first substrate (200) having a cavity part (210) at a predetermined region on its upper surface; a dielectric film stacked on the upper part of the first substrate; a first air gap formed between the first substrate and the dielectric film (220); a stacked resonance part (230) including a lower electrode/piezoelectric layer/upper electrode formed on the upper part of the dielectric film; a second substrate (240) having a cavity part at a predetermined region on its lower surface and joined to the first substrate; and a second air gap (250) formed between the stacked resonance part and the second substrate. A thin film of predetermined thickness made of a liquid crystal polymer (LCP) may be used as the dielectric film.</p>
申请公布号 EP1523097(B1) 申请公布日期 2014.03.05
申请号 EP20040255782 申请日期 2004.09.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG, IN-SANG;HA, BYEOUNG-JU;HWANG, JUN-SIK;PARK, YUN-KWON
分类号 H01L41/09;H03H9/10;H01L41/08;H01L41/18;H03H3/02;H03H9/17;H03H9/24;H03H9/58;H03H9/70 主分类号 H01L41/09
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