发明名称 PLASMA PROCESSING APPARATUS AND METHOD FOR PLASMA PROCESSING
摘要 The present invention provides a plasma processing apparatus which has time-modulated high frequency power which is controllable widely and precisely and a plasma processing method which uses the plasma processing apparatus. The plasma processing apparatus provided by the present invention includes: a vacuum container; a first high frequency power source for generating plasma in the vacuum container; a specimen plate which is arranged in the vacuum container and has a specimen arranged on the specimen plate; and a second high frequency power source which supplies high frequency power to the specimen plate. At least one between the first high frequency power source and the second high frequency power source supplies the time-modulated high frequency power, one of parameters which control the time modulation has two or more different control ranges, and one of the control ranges is a control range for performing a control of high precision. [Reference numerals] (AA) Repetition frequency area 1; (BB) Repetition frequency area 2; (CC) Duty ratio (%); (DD) Area A; (EE) Area B; (FF) Duty ratio area 2; (GG) Duty ratio area 1; (HH) Area C; (II) Repetition frequency (Hz); (JJ) Area D
申请公布号 KR20140026234(A) 申请公布日期 2014.03.05
申请号 KR20130006127 申请日期 2013.01.18
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 MORIMOTO MICHIKAZU;OHGOSHI YASUO;OOHIRABARU YUUZOU;ONO TETSUO
分类号 H05H1/46;C23F4/00;H01L21/3065 主分类号 H05H1/46
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