| 摘要 |
<p>Disclosed are a variable resistance memory device capable of realizing a multi-level cell, a method for fabricating the same, and a memory apparatus and a data processing system having the same. According to one embodiment of the present technique, the resistance memory device includes: a lower electrode; a first phase change material layer formed on the lower electrode; a second phase change material layer surrounding the outside wall of the first phase change material layer; and an upper electrode formed in the upper part of the second phase change material layer and the first phase change material layer.</p> |
