| 摘要 |
Disclosed are an access device capable of lowering the height and efficiently controlling leakage current, and a fabrication method thereof, and a semiconductor memory device having the same. According to one embodiment of the present technique, the access device can include a first type semiconductor layer, a third type semiconductor layer formed on the first type semiconductor layer, a second type semiconductor layer formed on the third type semiconductor, a first counter doping layer for the first type semiconductor layer which is formed between the first type semiconductor layer and the third type semiconductor layer, and a second counter doping layer for the second type semiconductor layer which is formed between the third type semiconductor layer and the second type semiconductor layer. |
