METHOD OF FABRICATING MICRO-GRID STRUCTURE USING WAFER BONDING TECHNIQUES

摘要

The present invention relates to a method of fabricating a micro-grid structure using a wafer bonding technique. According to the embodiment of the present invention, the structural deformation of a grid can be prevented. According to the embodiment of the present invention, the penetration ratio of an electron beam can be improved. According to the embodiment of the present invention, a method of fabricating a micro-grid structure is used in a micro-grid gate such as an electron beam discharge device of a triode structure. [Reference numerals] (S10) Form a wafer bonding structure of a SOI structure; (S11) Form a grid structure by using a dry etching technique on a lower substrate; (S12) Form a hole by using a wet etching technique on the other side which is corresponded; (S13) Form a difussion barrier on a wafer; (S14) Form electrodes on the wafer; (S15) Micro-grid element