| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique capable of improving electrical characteristics of a semiconductor device. <P>SOLUTION: Semiconductor chips 4PH, 4PL having power MOSFET (metal oxide semiconductor field-effect transistor) formed thereon, and a semiconductor chip 4D having a control circuit for controlling the operation thereof are enclosed within a package PA of the semiconductor device 2. Source electrode bonding pads 12S1, 12S2 of the high-side semiconductor chip 4PH are electrically connected to a die pad 7D2 through a metal plate 8A. A source electrode bonding pad 15S1 of the low-side semiconductor chip 4PL is electrically connected to a lead wire 7LB through a metal plate 8B. The metal plate 8B includes a firs section 8B1 contacting with the bonding pad 15S1 of the semiconductor chip 4PL, a second section 8B2 extending from a short side of the first section 8B1 to the lead wire 7LB, and a third section 8B3 extending from a long side of the first section 8B2 to the lead wire 7LB. <P>COPYRIGHT: (C)2011,JPO&INPIT |
