| 摘要 |
<p>Disclosed are a semiconductor memory device capable of improving the electrical contact property of an access device and a lower electrode and a fabrication method thereof. According to an embodiment of the present technology, the semiconductor memory device may include an access device of a pillar shape formed on a semiconductor substrate, a first conductive layer which is self-aligned with the access device, a protection layer of a designated thickness and width formed on the upper edge of the first conductive layer, and a lower electrode electrically connected to the first conductive layer.</p> |
