| 摘要 |
<p>The present invention relates to a non-volatile memory device capable of improving cell properties, and a method for manufacturing the same. The non-volatile memory device includes: a tunnel insulating layer which is formed on an active region defined by device isolating layers; a polysilicon pattern which includes a first part formed on the tunnel insulating layer between the device isolation layers, and a second part protruding more than the device isolation layer from the first part and having a width narrower than the width of the first part; and a doping region which is formed on the surface of the polysilicon pattern and includes a P type dopant. [Reference numerals] (AA) Plasma doping</p> |
