| 摘要 |
<p>A semiconductor memory device (10) comprises a memory controller (12), and an array of memory cells (20) coupled to communicate with the memory controller. The memory controller is configured to perform a first soft program operation (56) using first soft program voltages and a first soft program verify level, and determine whether a first charge trapping threshold has been reached (54). When the first charge trapping threshold has been reached, a second soft program operation (56) is performed using second soft program voltages and a second soft program verify level.</p> |
