| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion device in which dispersion in photoelectric conversion characteristics among pixels can be reduced and a semiconductor chip mounted thereon can be miniaturized.SOLUTION: In a photoelectric conversion device, n numbers of 1-bit photoelectric conversion circuits 2 are successively connected to an output circuit 3 by successively switching an SW4 to a closed state. With respect to image reading, in the n numbers of the 1-bit photoelectric conversion circuits 2, an SW1 is set to a closed state to make a PD read an image. After the SW1 is set to an open state, an SW2 and an SW3 are set to a closed state after a fixed period of time when image signals are held in the PD, whereby the image signals are transferred to and held in a C1. In one of the 1-bit photoelectric conversion circuits 2 and the output circuit 3 which are connected to each other by setting the SW4 to a closed state, the SW3 and an SW5 are simultaneously set to a closed state to transfer and hold the image signals of the C1 to and in a C2. Subsequently, the SW1, the SW2 and an SW6 are simultaneously set to a closed state to transfer and hold the image signals to and in an C3 with a power supply voltage applied to the PD as a reference voltage. The difference between both the signals is output from an AMP. |
