RESISTIVE MEMORY DEVICE USING BLOCK COPOLYMER SELF-ASSEMBLY TECHNOLOGY AND MANUFACTURING METHOD FOR THE SAME

摘要

The present invention relates to a unipolar resistance random access memory device comprising a bottom electrode; an oxide layer on the bottom electrode; and a top electrode on the oxide layer, wherein at least one insulation nanostructure is formed at an interface between the bottom or the top electrode and the oxide layer.