NONVOLATILE MEMORY DEVICE, METHOD FOR OPERATING THE SAME AND METHOD FOR FABRICATING THE SAME

摘要

The present invention relates to a nonvolatile memory device, a method for operating the same and a method for fabricating the same. The nonvolatile memory device includes a semiconductor substrate which includes an active region made of a P type semiconductor, a channel which is arranged on the upper part of the active region and is vertically extended to the semiconductor substrate, and a first and a second string which includes memory cells which are stacked along the channel. The active region is directly connected to the channel of the first and the second vertical string. [Reference numerals] (AA) First direction; (BB) Second direction