发明名称 NONVOLITILE MEMORY DEVICE AND DATA PROCESSING METHODS THEREOF
摘要 <p>The present invention relates to a nonvolatile memory device and a data processing method for the same. The nonvolatile memory device of the present invention comprises: a first memory cell group connected to a word line, and positioned within a first distance from a reference node; a second memory cell group connected to the word line, and positioned farther from the reference node than the first distance; a first bit line group connected to the first memory cell group; a second bit line group connected to the second memory cell group; and a control logic configured to supply pre-charge voltages of different levels to the first and second bit line groups in a read or verification read operation. The nonvolatile memory device and the data processing method of the present invention can reduce a program time by decreasing a program execution time and a number of program loops.</p>
申请公布号 KR20140025164(A) 申请公布日期 2014.03.04
申请号 KR20120091482 申请日期 2012.08.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, IL HAN;KIM, SEUNG BUM;JUNG, GO EUN
分类号 G11C16/34;G11C16/08;G11C16/24;G11C16/26 主分类号 G11C16/34
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