发明名称 |
NONVOLITILE MEMORY DEVICE AND DATA PROCESSING METHODS THEREOF |
摘要 |
<p>The present invention relates to a nonvolatile memory device and a data processing method for the same. The nonvolatile memory device of the present invention comprises: a first memory cell group connected to a word line, and positioned within a first distance from a reference node; a second memory cell group connected to the word line, and positioned farther from the reference node than the first distance; a first bit line group connected to the first memory cell group; a second bit line group connected to the second memory cell group; and a control logic configured to supply pre-charge voltages of different levels to the first and second bit line groups in a read or verification read operation. The nonvolatile memory device and the data processing method of the present invention can reduce a program time by decreasing a program execution time and a number of program loops.</p> |
申请公布号 |
KR20140025164(A) |
申请公布日期 |
2014.03.04 |
申请号 |
KR20120091482 |
申请日期 |
2012.08.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, IL HAN;KIM, SEUNG BUM;JUNG, GO EUN |
分类号 |
G11C16/34;G11C16/08;G11C16/24;G11C16/26 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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