发明名称 Semiconductor storage device
摘要 According to one embodiment, when a row address of a port A matches a row address of a port B, a memory cell is accessed only from the port A by controlling a word line potential of the port A based on a third clock, and data is exchanged between a bit line of the port A and the port A based on a first clock and data is exchanged between the bit line of the port A and the port B based on a second clock.
申请公布号 US8665636(B2) 申请公布日期 2014.03.04
申请号 US201113237269 申请日期 2011.09.20
申请人 FUKUDA TOSHIKAZU;KABUSHIKI KAISHA TOSHIBA 发明人 FUKUDA TOSHIKAZU
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
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