MAGNETIC MEMORY DEVICES HAVING PERPENDICULAR MAGNETIC TUNNEL JUNCTION

摘要

Provided are magnetic memory devices with a perpendicular magnetic tunnel junction. The device includes a magnetic tunnel junction including a free layer structure, a fixed layer structure, and a tunnel barrier which is formed between the free layer structure and the fixed layer structure. The fixed layer structure includes a first magnetic layer with an internal perpendicular magnetization feature, a second magnetic layer with the internal horizontal magnetization feature, and an exchange combination layer which is interposed between the first magnetic layer and the second magnetic layer. At this time, the magnetization direction of the second magnetic layer is vertical by antiferromagnetic combination with the first magnetic layer through the exchange combination layer. The exchange combination layer is formed with a thickness to maximize the antiferromagnetic combination between the first magnetic layer and the second magnetic layer.