发明名称 THREE-DIMENSIONAL INTEGRATED CIRCUIT STRUCTURE AND METHOD OF ALUMINUM NITRIDE INTERPOSER SUBSTRATE
摘要 <p>The present invention relates to a 3D integrated circuit structure comprising a first metal circuit substrate; an interposer substrate mounted on the first metal circuit substrate and electrically connected to the same; and at least one semiconductor element mounted on the interposer substrate. The interposer substrate extends the lifespan of the semiconductor element by radiating heat generated when the semiconductor element is operating.</p>
申请公布号 KR20140025257(A) 申请公布日期 2014.03.04
申请号 KR20120120673 申请日期 2012.10.29
申请人 CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY, ARMAMENTS BUREAU, M.N.D 发明人 KUO YANG KUO;HSIANG CHIA YI;KU HUNG TAI
分类号 H01L23/48 主分类号 H01L23/48
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