| 摘要 |
Provided is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device includes: a first conductive semiconductor layer; an activating layer located on the first conductive semiconductor layer; a second conductive semiconductor layer located on the activating layer; a first electrode electrically connecting to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a stress controlling layer located between the first conductive semiconductor layer and the second conductive semiconductor layer and providing the stress generated from the first conductive semiconductor layer, to the first conductive semiconductor layer. Therefore, the present invention may improve high quality of the nitride semiconductor by minimizing the stress in a thin film using the stress controlling layer. |
