发明名称 |
High power efficiency, large substrate, polycrystalline CdTe thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation |
摘要 |
Solar cell structures formed using molecular beam epitaxy (MBE) that can achieve improved power efficiencies in relation to prior art thin film solar cell structures are provided. A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device using MBE are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described. |
申请公布号 |
US8664524(B2) |
申请公布日期 |
2014.03.04 |
申请号 |
US20090505369 |
申请日期 |
2009.07.17 |
申请人 |
GARNETT JAMES DAVID;URIEL SOLAR, INC. |
发明人 |
GARNETT JAMES DAVID |
分类号 |
H01L31/00;H01L21/00 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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