发明名称 |
Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same |
摘要 |
Graphene, a method of fabricating the same, and a transistor having the graphene are provided, the graphene includes a structure of carbon (C) atoms partially substituted with boron (B) atoms and nitrogen (N) atoms. The graphene has a band gap. The graphene substituted with boron and nitrogen may be used as a channel of a field effect transistor. The graphene may be formed by performing chemical vapor deposition (CVD) method using borazine or ammonia borane as a boron nitride (B-N) precursor. |
申请公布号 |
US8664439(B2) |
申请公布日期 |
2014.03.04 |
申请号 |
US201113064896 |
申请日期 |
2011.04.25 |
申请人 |
LEE SUNG-HOON;SEO SUN-AE;WOO YUN-SUNG;CHUNG HYUN-JONG;HEO JIN-SEONG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SUNG-HOON;SEO SUN-AE;WOO YUN-SUNG;CHUNG HYUN-JONG;HEO JIN-SEONG |
分类号 |
C07F5/02 |
主分类号 |
C07F5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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