发明名称 Methods for directed self-assembly process/proximity correction
摘要 In an exemplary embodiment, a method of fabricating an integrated circuit includes designing an optical photomask for forming a pre-pattern opening in a photoresist layer on a semiconductor substrate, wherein the photoresist layer and the pre-pattern opening are coated with a self-assembly material that undergoes directed self-assembly (DSA) to form a DSA pattern. The step of designing the optical photomask includes using a computing system, inputting a DSA target pattern, and using the computing system, applying a DSA model to the DSA target pattern to generate a first DSA directing pattern. Further, the step of designing the optical photomask includes using the computing system, calculating a residual between the DSA target pattern and the DSA directing pattern, and using the computing system, applying the DSA model to the first DSA directing pattern and the residual to generate a second, updated DSA directing pattern.
申请公布号 US8667428(B1) 申请公布日期 2014.03.04
申请号 US201213659453 申请日期 2012.10.24
申请人 GLOBALFOUNDRIES, INC. 发明人 LATYPOV AZAT
分类号 G06F17/50;G03F1/00;G03F1/36;G03F1/38;G06F19/00;G06K9/00;G21K5/00 主分类号 G06F17/50
代理机构 代理人
主权项
地址