发明名称 |
Low-diffusion drain and source regions in CMOS transistors for low power/high performance applications |
摘要 |
The drain and source regions may at least be partially formed by in situ doped epitaxially grown semiconductor materials for complementary transistors in sophisticated semiconductor devices designed for low power and high performance applications. To this end, cavities may be refilled with in situ doped semiconductor material, which in some illustrative embodiments also provides a desired strain in the channel regions of the complementary transistors. |
申请公布号 |
US8664068(B2) |
申请公布日期 |
2014.03.04 |
申请号 |
US201113192620 |
申请日期 |
2011.07.28 |
申请人 |
HOENTSCHEL JAN;FLACHOWSKY STEFAN;LANGDON STEVEN;SCHEIPER THILO;GLOBALFOUNDRIES INC. |
发明人 |
HOENTSCHEL JAN;FLACHOWSKY STEFAN;LANGDON STEVEN;SCHEIPER THILO |
分类号 |
H01L21/336;H01L21/36 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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