发明名称 |
Semiconductor devices having slit well tub |
摘要 |
An electrostatic discharge semiconductor device can include a first conductivity type substrate that includes inner first conductivity type wells therein and a plurality of gate electrodes that are on an active region of the substrate. A second conductivity type well can be located in the substrate beneath the plurality of gate electrodes including at least one slit therein providing electrical contact between the inner first conductivity type wells and a first conductivity type outer well outside the active region. |
申请公布号 |
US8664724(B2) |
申请公布日期 |
2014.03.04 |
申请号 |
US201113081128 |
申请日期 |
2011.04.06 |
申请人 |
KIM SE-YOUNG;YANG GI-YOUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SE-YOUNG;YANG GI-YOUNG |
分类号 |
H01L23/62 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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