发明名称 |
Techniques for forming narrow copper filled vias having improved conductivity |
摘要 |
Techniques for improving the conductivity of copper (Cu)-filled vias are provided. In one aspect, a method of fabricating a Cu-filled via is provided. The method includes the following steps. A via is etched in a dielectric. The via is lined with a diffusion barrier. A thin ruthenium (Ru) layer is conformally deposited onto the diffusion barrier. A thin seed Cu layer is deposited on the Ru layer. A first anneal is performed to increase a grain size of the seed Cu layer. The via is filled with additional Cu. A second anneal is performed to increase the grain size of the additional Cu. |
申请公布号 |
US8661664(B2) |
申请公布日期 |
2014.03.04 |
申请号 |
US20100838597 |
申请日期 |
2010.07.19 |
申请人 |
MCFEELY FENTON READ;YANG CHIH-CHAO;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MCFEELY FENTON READ;YANG CHIH-CHAO |
分类号 |
H01K3/10 |
主分类号 |
H01K3/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|