发明名称 |
Method of forming a robust, modular MIS (metal-insulator-semiconductor) capacitor with improved capacitance density |
摘要 |
A method of forming a capacitor structure comprises: forming a doped polysilicon layer on an underlying dielectric layer; forming a dielectric stack on the doped polysilicon layer; forming a contact hole in the dielectric stack to expose a surface region of the doped polysilicon layer; forming a conductive contact plug that fills the contact hole and is in contact with the exposed surface of the doped polysilicon layer; forming a plurality of trenches in the dielectric stack such that each trench exposes a corresponding surface region of the doped polysilicon layer; forming a conductive bottom capacitor plate on exposed surfaces of the of the dielectric stack and on exposed surfaces of the doped polysilicon layer; forming a capacitor dielectric layer on the bottom capacitor plate; and forming a conductive top capacitor plate on the capacitor dielectric layer. |
申请公布号 |
US8664076(B2) |
申请公布日期 |
2014.03.04 |
申请号 |
US201113239192 |
申请日期 |
2011.09.21 |
申请人 |
RAGHAVAN VENKAT;STRACHAN ANDREW;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
RAGHAVAN VENKAT;STRACHAN ANDREW |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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