发明名称 |
Method of manufacturing a semiconductor structure and separating the semiconductor from a substrate |
摘要 |
A method of manufacturing a semiconductor structure is disclosed, which includes providing a substrate comprising a bottom surface and a growth surface opposite to the bottom surface; forming a buffer layer comprising a first surface which is not a C-plane substantially parallel with the bottom surface on the growth surface; forming a semiconductor structure on the buffer layer; forming at least one cavity in the buffer layer; extending the cavity along a main extending direction; separating the substrate and the semiconductor structure; wherein the main extending direction is substantially not parallel with the normal direction of the first surface. |
申请公布号 |
US8664087(B2) |
申请公布日期 |
2014.03.04 |
申请号 |
US201113310342 |
申请日期 |
2011.12.02 |
申请人 |
CHANG SHIH-PANG;YANG HUNG-CHI;SHEN YU-JIUN;EPISTAR CORPORATION |
发明人 |
CHANG SHIH-PANG;YANG HUNG-CHI;SHEN YU-JIUN |
分类号 |
H01L21/30;H01L21/46 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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