发明名称 |
Solid-state image device, method for producing the same, and image pickup apparatus |
摘要 |
A solid-state image device includes a silicon substrate, and a photoelectric conversion layer arranged on the silicon substrate and lattice-matched to the silicon substrate, the photoelectric conversion layer being composed of a chalcopyrite-based compound semiconductor of a copper-aluminum-gallium-indium-sulfur-selenium-based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium-based mixed crystal. |
申请公布号 |
US8665363(B2) |
申请公布日期 |
2014.03.04 |
申请号 |
US20100691021 |
申请日期 |
2010.01.21 |
申请人 |
TODA ATSUSHI;SONY CORPORATION |
发明人 |
TODA ATSUSHI |
分类号 |
H04N5/225 |
主分类号 |
H04N5/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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