发明名称 |
Semiconductor substrates with undercut structures |
摘要 |
An intermediate semiconductor structure that comprises a substrate and at least one undercut structure formed in the substrate is disclosed. The undercut feature may include a vertical opening having a lateral cavity therein, the vertical opening extending below the lateral cavity. The lateral cavity may include faceted sidewalls. |
申请公布号 |
US8664742(B2) |
申请公布日期 |
2014.03.04 |
申请号 |
US20090622939 |
申请日期 |
2009.11.20 |
申请人 |
WELLS DAVID H.;MANNING H. MONTGOMERY;MICRON TECHNOLOGY, INC. |
发明人 |
WELLS DAVID H.;MANNING H. MONTGOMERY |
分类号 |
H01L21/70 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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