发明名称 |
Electrostatic discharge (ESD) protection device, method of fabricating the device, and electronic apparatus including the device |
摘要 |
An electrostatic discharge (ESD) device includes a substrate, an external well of a first conductivity type in the substrate, and an internal well of a second conductivity type in the external well, the first conductivity type opposite the second conductivity type. The ESD device further includes a first heavily doped region of the first conductivity type located at a surface of the internal well, a second heavily doped region of the second conductivity type located at a surface of the internal well, and a third heavily doped region of the first conductivity type located at a surface of the external well. The second heavily doped region is interposed between and spaced from each of the first and third heavily doped regions, and at least one of a space between the first and second heavily doped regions and a space between the second and third heavily doped regions is devoid of a device isolation structure of electrical isolation material. |
申请公布号 |
US8664726(B2) |
申请公布日期 |
2014.03.04 |
申请号 |
US201113041693 |
申请日期 |
2011.03.07 |
申请人 |
CHANG DONG-RYUL;KWON OH-KYUNM;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHANG DONG-RYUL;KWON OH-KYUNM |
分类号 |
H01L23/62 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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