发明名称 |
METHOD AND SYSTEM FOR CONTROLLING CRITICAL DIMENSION AND ROUGHNESS IN RESIST FEATURES |
摘要 |
A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature. |
申请公布号 |
KR20140025497(A) |
申请公布日期 |
2014.03.04 |
申请号 |
KR20137031655 |
申请日期 |
2012.04.26 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
GODET LUDOVIC;LEAVITT CHRISTOPHER J.;OLSON JOSEPH;MARTIN PATRICK M. |
分类号 |
H01J27/02;B01J19/08 |
主分类号 |
H01J27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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