| 发明名称 |
Non-volatile memory device including semiconductor charge-trapping material particles |
| 摘要 |
A memory device can include an active layer that has a selectable lateral conductivity. The layer can include a plurality of nanoparticles. |
| 申请公布号 |
US8664640(B2) |
申请公布日期 |
2014.03.04 |
| 申请号 |
US20040958659 |
申请日期 |
2004.10.06 |
| 申请人 |
BAWENDI MOUNGI G.;BULOVIC VLADIMIR;COE-SULLIVAN SETH A.;MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
BAWENDI MOUNGI G.;BULOVIC VLADIMIR;COE-SULLIVAN SETH A. |
| 分类号 |
H01L29/788;G11C13/02;G11C16/04;H01L;H01L21/28;H01L29/423;H01L29/792;H01L31/0336 |
主分类号 |
H01L29/788 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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