发明名称 |
Method of manufacturing a flexible piezoelectric device |
摘要 |
A method of manufacturing a flexible piezoelectric device including laminating a first metal layer on a silicon oxide layer on a silicon substrate. The method further includes laminating a device on the first metal layer and annealing the first metal layer to oxidize the first metal into a first metal oxide. The method further includes etching the first metal oxide to separate the device from the silicon oxide layer and transferring the separated device to a flexible substrate using a transfer layer. The metal oxide layer laminated on the silicon substrate is etched to separate the device from the substrate. As a result, physical damage of the silicon substrate is prevented and a cost of using expensive single-crystal silicon substrate is reduced. |
申请公布号 |
US8661634(B2) |
申请公布日期 |
2014.03.04 |
申请号 |
US20100730907 |
申请日期 |
2010.03.24 |
申请人 |
LEE KEON JAE;KANG SUK JOONG L.;CHANG JAEMYUNG;PARK KWI-IL;KIM SEUNGJUN;LEE SANG YONG;KAIST (KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
LEE KEON JAE;KANG SUK JOONG L.;CHANG JAEMYUNG;PARK KWI-IL;KIM SEUNGJUN;LEE SANG YONG |
分类号 |
H01L41/22;H01L41/053 |
主分类号 |
H01L41/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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