发明名称 Method of manufacturing a flexible piezoelectric device
摘要 A method of manufacturing a flexible piezoelectric device including laminating a first metal layer on a silicon oxide layer on a silicon substrate. The method further includes laminating a device on the first metal layer and annealing the first metal layer to oxidize the first metal into a first metal oxide. The method further includes etching the first metal oxide to separate the device from the silicon oxide layer and transferring the separated device to a flexible substrate using a transfer layer. The metal oxide layer laminated on the silicon substrate is etched to separate the device from the substrate. As a result, physical damage of the silicon substrate is prevented and a cost of using expensive single-crystal silicon substrate is reduced.
申请公布号 US8661634(B2) 申请公布日期 2014.03.04
申请号 US20100730907 申请日期 2010.03.24
申请人 LEE KEON JAE;KANG SUK JOONG L.;CHANG JAEMYUNG;PARK KWI-IL;KIM SEUNGJUN;LEE SANG YONG;KAIST (KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 LEE KEON JAE;KANG SUK JOONG L.;CHANG JAEMYUNG;PARK KWI-IL;KIM SEUNGJUN;LEE SANG YONG
分类号 H01L41/22;H01L41/053 主分类号 H01L41/22
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