NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

The present invention relates to a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device according to the present invention includes a pipe connection gate electrode on a substrate; one or more pipe channel layers inside the pipe connection gate electrode; a pair of main channel layers which is connected to each pipe channel layer and which extends in a perpendicular direction to the substrate; multiple interlayer insulation films and cell gate electrodes alternately stacked on each other along the main channel layers; and a metal silicide layer in contact with the pipe connection gate electrode. According to the present invention, the electrical resistance of the pipe connection gate electrode significantly decreases by forming the metal silicide layer in contact with the pipe connection gate electrode without causing the characteristic degradation of a memory film.