SEMICONDUCTOR DEVICE HAVING TSV AND REDISTRIBUTION STRUCTURE

摘要

Disclosed is a semiconductor device which includes an inner circuit formed on the front surface of a substrate, a TSV which vertically penetrates the substrate and is electrically connected to the inner circuit, a redistribution structure which is formed on the back surface of the substrate and is electrically connected to the TSV, and a backside insulating layer which is formed between the back surface of the substrate and the redistribution structure. The redistribution structure includes a redistribution barrier layer and a redistribution metal layer. The redistribution barrier layer surrounds the lower surface of the redistribution metal layer and partly surrounds the lateral surfaces.