| 摘要 |
A semiconductor memory device comprises: an write control unit which loads a first input data entered to a first pad during an write operation processed in a test mode to a first and a second input/output line; a first write driver which stores the first input data loaded onto the first input/output line to a first cell block during the write operation processed in the test mode; and a first input/output line driving unit which drives the first input/output line and a first test input/output line in response to a first output data outputted from the first cell block during a read operation processed in the test mode. [Reference numerals] (11) First pad; (12) Second pad; (2) Test signal synthesis unit; (3) Write control unit; (4) Driving control signal generation unit; (51) First write driver; (52) Second write driver; (61) First input/output line driving unit; (62) Second input/output line driving unit; (7) Selection delivery unit; (8) Comparative signal generation unit; (9) Comparative signal output unit; (AA) First cell block; (BB) Second cell block |
