| 摘要 |
<p>A semiconductor memory device includes: a cell capacitor which is connected to an internal node and a storage node to store charges in a memory cell; an internal voltage generating unit which generates an internal voltage supplied to the internal node in response to a power-up signal; and an initializing device which initializes the internal node in response to the power-up signal. [Reference numerals] (11) Power-up signal generating unit; (12) Internal voltage generating unit</p> |
