发明名称 |
NONVOLATILE MEMORY DEVICE AND FABRICATING METHOD THEREOF |
摘要 |
A 3D nonvolatile memory device and a fabricating method thereof are provided. The 3D nonvolatile memory device includes a substrate where a cell array region and a connection region are defined, an electrode structure which is formed on the cell array region and the connection region and includes stacked electrodes, a second recess formed on the electrode structure on the connection region, a first recess which is formed on the electrode structure of the connection region and is arrange between the cell array region and the second recess, and vertical lines which are formed on the upper surface of the electrode exposed by the first recess. |
申请公布号 |
KR20140024609(A) |
申请公布日期 |
2014.03.03 |
申请号 |
KR20120090784 |
申请日期 |
2012.08.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM, JONG HEUN;KIM, HYO JUNG;IM, JI WOON;KIM, KYUNG HYUN |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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