| 摘要 |
The present invention relates to a semiconductor device for cutting down a malfunction rate and a manufacturing method for the same. The semiconductor device according to the present invention comprises a semiconductor substrate having an active zone defined by a first device separation film; a gate insulative film on the semiconductor substrate; a first conductive film on the gate insulative film; a dielectric film on the first conductive film; one or more first contact holes for passing through the first dielectric film; a second conductive film which fills up one or more contact holes and which is formed on the first dielectric film; and one or more first contact plugs which are positioned on the top of the active zone to be connected to the second conductive film and which alternate with one or more first contact holes to be overlapped with the first dielectric film. |
